GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers

Masao Kawaguchi; Tomoyuki Miyamoto; Atsushi Saitoh; Fumio Koyama

doi:10.1143/jjap.43.l453

GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers

Masao Kawaguchi, Tomoyuki Miyamoto, Atsushi Saitoh, Fumio Koyama

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (∼0.65%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.

Original language	English
Pages (from-to)	L453-L455
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	43
Issue number	4 A
DOIs	https://doi.org/10.1143/jjap.43.l453
Publication status	Published - 2004 Apr 1
Externally published	Yes

Keywords

GaInNAs
IML
Semiconductor laser

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.43.l453

Cite this

@article{211ea62139c54127ab78b5b3a7636f4a,

title = "GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers",

abstract = "We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (∼0.65%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.",

keywords = "GaInNAs, IML, Semiconductor laser",

author = "Masao Kawaguchi and Tomoyuki Miyamoto and Atsushi Saitoh and Fumio Koyama",

year = "2004",

month = apr,

day = "1",

doi = "10.1143/jjap.43.l453",

language = "English",

volume = "43",

pages = "L453--L455",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 A",

}

TY - JOUR

T1 - GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers

AU - Kawaguchi, Masao

AU - Miyamoto, Tomoyuki

AU - Saitoh, Atsushi

AU - Koyama, Fumio

PY - 2004/4/1

Y1 - 2004/4/1

N2 - We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (∼0.65%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.

AB - We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (∼0.65%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.

KW - GaInNAs

KW - IML

KW - Semiconductor laser

UR - http://www.scopus.com/inward/record.url?scp=2942627904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2942627904&partnerID=8YFLogxK

U2 - 10.1143/jjap.43.l453

DO - 10.1143/jjap.43.l453

M3 - Article

AN - SCOPUS:2942627904

SN - 0021-4922

VL - 43

SP - L453-L455

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 4 A

ER -

GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this