GaN-based optoelectronic devices on sapphire and Si substrates

Masayoshi Umeno, Takashi Egawa, Hiroyasu Ishikawa

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


A recessed gate AlGaN/GaN high-electron mobility transistor (HEMT) on sapphire (0 0 0 1), a GaN metal-semiconductor field-effect transistor (MESFET) and an InGaN multiple-quantum well green light-emitting diode (LED) on Si (1 1 1) substrates have been grown by metalorganic chemical vapor deposition. The AlGaN/GaN intermediate layers have been used for the growth of GaN MESFET and LED on Si substrates. A two-dimensional electron gas mobility as high as 9260 cm2/Vs with a sheet carrier density of 4.8×1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device on sapphire showed a maximum extrinsic transconductance of 146 mS/mm and a drain-source current of 900 mA/mm for the AlGaN/GaN HEMT with a gate length of 2.1 μm at 25°C. The GaN MESFET on Si showed a maximum extrinsic transconductance of 25 mS/mm and a drain-source current of 169 mA/mm with a complete pinch-off for the 2.5-μm-gate length. The LED on Si exhibited an operating voltage of 18 V, a series resistance of 300Ω, an optical output power of 10 μW and a peak emission wavelength of 505 nm with a full-width at half-maximum of 33 nm at 20 mA drive current.

Original languageEnglish
Pages (from-to)459-466
Number of pages8
JournalMaterials Science in Semiconductor Processing
Issue number6
Publication statusPublished - 2001 Dec 1
Externally publishedYes


  • 2DEG
  • AlGaN/GaN HEMT
  • GaN on Si
  • InGaN LED

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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