GaN-based optoelectronic devices on Si grown by MOCVD

Hiroyasu Ishikawa; Takashi Egawa

GaN-based optoelectronic devices on Si grown by MOCVD

Research output: Contribution to conference › Paper › peer-review

Abstract

We demonstrate improved characteristics of GaInN light-emitting diodes (LEDs) grown on Si by a horizontal metalorganic chemical vapor deposition method. A high-temperature-grown thin AlGaN/AlN intermediate layer and AlN/GaN multilayers have been used for the growth of a high-quality LED structure on Si substrate. The green LED on Si exhibited a forward voltage of 4.1 V at 20 mA and a series resistance of 30 Ω. The output power of 18-20 μW was obtained at 20 mA, which was approximately half that of LED grown on sapphire. The AlGaN/GaN high electron mobility transistors (HEMTs) were also realized on Si substrates. The 2-um-gate length AlGaN/GaN HEMT showed a good maximum extrinsic transconductance of 142 mS/mm.

Original language	English
Pages	34-38
Number of pages	5
Publication status	Published - 2004 Oct 28
Externally published	Yes
Event	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: 2004 May 9 → 2004 May 14

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	04/5/9 → 04/5/14

ASJC Scopus subject areas

Engineering(all)

Cite this

GaN-based optoelectronic devices on Si grown by MOCVD. / Ishikawa, Hiroyasu; Egawa, Takashi.

2004. 34-38 Paper presented at State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Research output: Contribution to conference › Paper › peer-review

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abstract = "We demonstrate improved characteristics of GaInN light-emitting diodes (LEDs) grown on Si by a horizontal metalorganic chemical vapor deposition method. A high-temperature-grown thin AlGaN/AlN intermediate layer and AlN/GaN multilayers have been used for the growth of a high-quality LED structure on Si substrate. The green LED on Si exhibited a forward voltage of 4.1 V at 20 mA and a series resistance of 30 Ω. The output power of 18-20 μW was obtained at 20 mA, which was approximately half that of LED grown on sapphire. The AlGaN/GaN high electron mobility transistors (HEMTs) were also realized on Si substrates. The 2-um-gate length AlGaN/GaN HEMT showed a good maximum extrinsic transconductance of 142 mS/mm.",

author = "Hiroyasu Ishikawa and Takashi Egawa",

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AB - We demonstrate improved characteristics of GaInN light-emitting diodes (LEDs) grown on Si by a horizontal metalorganic chemical vapor deposition method. A high-temperature-grown thin AlGaN/AlN intermediate layer and AlN/GaN multilayers have been used for the growth of a high-quality LED structure on Si substrate. The green LED on Si exhibited a forward voltage of 4.1 V at 20 mA and a series resistance of 30 Ω. The output power of 18-20 μW was obtained at 20 mA, which was approximately half that of LED grown on sapphire. The AlGaN/GaN high electron mobility transistors (HEMTs) were also realized on Si substrates. The 2-um-gate length AlGaN/GaN HEMT showed a good maximum extrinsic transconductance of 142 mS/mm.

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GaN-based optoelectronic devices on Si grown by MOCVD

Abstract

Conference

ASJC Scopus subject areas

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