High-purity silicas synthesized by various manufacturing methods were studied by electron-spin resonance after being irradiated by ArF excimer laser (6.4 eV) at room temperature. Ee centers (?Si) are induced in all samples, while nonbridging oxygen hole centers (?Si-O) appear only in oxygen-surplus silicas and in a sample which has an absorption band at 5.1 eV. The concentration of Ee centers varies from sample to sample, ranging between 1014 and 1016 spins/cm3 for the exposure at the average power density of 28 mJ/cm2 per pulse at 15 Hz for 1 h. The sample dependence regarding the species and concentrations of photoinduced defects is well explained in terms of transformation of preexisting precursors to paramagnetic defects through a two-photon-absorption process.
ASJC Scopus subject areas
- Condensed Matter Physics