Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates

M. Miyoshi; A. Imanishi; H. Ishikawa; T. Egawa; K. Asai; M. Mouri; T. Shibata; M. Tanaka; O. Oda

Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates

M. Miyoshi, A. Imanishi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda

Research output: Contribution to journal › Conference article › peer-review

Abstract

Al_0.26Ga_0.74N/AlN/GaN heterostructures with a 1-nm-thick AlN interfacial layer were grown on 100-mm-diameter epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. They exhibited very high Hall mobilities of approximately 2100 cm²/Vs at room temperature and approximately 25000 cm²/Vs at 15 K with a sheet carrier density of approximately 1 × 10¹³/cm². High-electron- mobility transistors were successfully fabricated on the epitaxial wafers. The device exhibited a high drain current density of 832 mA/mm and high extrinsic transconductance of 189 mS/mm.

Original language	English
Pages (from-to)	1031-1034
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 2004 Dec 1
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates",

abstract = "Al0.26Ga0.74N/AlN/GaN heterostructures with a 1-nm-thick AlN interfacial layer were grown on 100-mm-diameter epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. They exhibited very high Hall mobilities of approximately 2100 cm2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a sheet carrier density of approximately 1 × 1013/cm2. High-electron- mobility transistors were successfully fabricated on the epitaxial wafers. The device exhibited a high drain current density of 832 mA/mm and high extrinsic transconductance of 189 mS/mm.",

author = "M. Miyoshi and A. Imanishi and H. Ishikawa and T. Egawa and K. Asai and M. Mouri and T. Shibata and M. Tanaka and O. Oda",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "1031--1034",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

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TY - JOUR

T1 - Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates

AU - Miyoshi, M.

AU - Imanishi, A.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Asai, K.

AU - Mouri, M.

AU - Shibata, T.

AU - Tanaka, M.

AU - Oda, O.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Al0.26Ga0.74N/AlN/GaN heterostructures with a 1-nm-thick AlN interfacial layer were grown on 100-mm-diameter epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. They exhibited very high Hall mobilities of approximately 2100 cm2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a sheet carrier density of approximately 1 × 1013/cm2. High-electron- mobility transistors were successfully fabricated on the epitaxial wafers. The device exhibited a high drain current density of 832 mA/mm and high extrinsic transconductance of 189 mS/mm.

AB - Al0.26Ga0.74N/AlN/GaN heterostructures with a 1-nm-thick AlN interfacial layer were grown on 100-mm-diameter epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. They exhibited very high Hall mobilities of approximately 2100 cm2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a sheet carrier density of approximately 1 × 1013/cm2. High-electron- mobility transistors were successfully fabricated on the epitaxial wafers. The device exhibited a high drain current density of 832 mA/mm and high extrinsic transconductance of 189 mS/mm.

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M3 - Conference article

AN - SCOPUS:21644452653

SN - 0163-1918

SP - 1031

EP - 1034

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates

Abstract

ASJC Scopus subject areas

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