| Original language | English |
|---|---|
| Pages (from-to) | Tu-P3.005 |
| Journal | Default journal |
| Publication status | Published - 2003 May 1 |
Growth of GaN on 4-inch Si substrates with a thin AlGaN/AlN intermediate layer
H. Ishikawa, M. Kato, M.S. Hao, T. Egawa, T. Jimbo
Research output: Contribution to journal › Article › peer-review
8
Citations
(Scopus)