TY - GEN
T1 - GROWTH of platy InGaAs single crystals and fabrication of 1.3 μm laser diodes
AU - Kinoshita, K.
AU - Ueda, T.
AU - Adachi, S.
AU - Masaki, T.
AU - Yoda, S.
AU - Arai, M.
AU - Watanabe, T.
AU - Yuda, M.
AU - Kondo, Y.
PY - 2007
Y1 - 2007
N2 - High quality InxGa1-xAs platy single crystals (x: 0.1 - 0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.
AB - High quality InxGa1-xAs platy single crystals (x: 0.1 - 0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.
UR - http://www.scopus.com/inward/record.url?scp=34748860920&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34748860920&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2007.381192
DO - 10.1109/ICIPRM.2007.381192
M3 - Conference contribution
AN - SCOPUS:34748860920
SN - 142440875X
SN - 9781424408757
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 339
EP - 342
BT - IPRM'07
T2 - IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
Y2 - 14 May 2007 through 18 May 2007
ER -