Half-micron pitch Cu interconnection technology

Kazuyoshi Ueno; Koichi Ohto; Kinji Tsunenari

Half-micron pitch Cu interconnection technology

Kazuyoshi Ueno, Koichi Ohto, Kinji Tsunenari

Research output: Contribution to journal › Conference article › peer-review

Abstract

Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.

Original language	English
Pages (from-to)	27-28
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Publication status	Published - 1995 Dec 1
Externally published	Yes
Event	Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn Duration: 1995 Jun 6 → 1995 Jun 8

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Half-micron pitch Cu interconnection technology",

abstract = "Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.",

author = "Kazuyoshi Ueno and Koichi Ohto and Kinji Tsunenari",

year = "1995",

month = dec,

day = "1",

language = "English",

pages = "27--28",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 Symposium on VLSI Technology ; Conference date: 06-06-1995 Through 08-06-1995",

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TY - JOUR

T1 - Half-micron pitch Cu interconnection technology

AU - Ueno, Kazuyoshi

AU - Ohto, Koichi

AU - Tsunenari, Kinji

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.

AB - Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.

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M3 - Conference article

AN - SCOPUS:0029484254

SN - 0743-1562

SP - 27

EP - 28

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - Proceedings of the 1995 Symposium on VLSI Technology

Y2 - 6 June 1995 through 8 June 1995

ER -

Half-micron pitch Cu interconnection technology

Abstract

ASJC Scopus subject areas

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