High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

M. Miyoshi; H. Ishikawa; T. Egawa; K. Asai; M. Mouri; T. Shibata

High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1710-1712
Journal	Default journal
Volume	85
Publication status	Published - 2004 Sept 1

Cite this

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title = "High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy",

author = "M. Miyoshi and H. Ishikawa and T. Egawa and K. Asai and M. Mouri and T. Shibata",

year = "2004",

month = sep,

day = "1",

language = "English",

volume = "85",

pages = "1710--1712",

journal = "Default journal",

}

TY - JOUR

T1 - High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

AU - Miyoshi, M.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Asai, K.

AU - Mouri, M.

AU - Shibata, T.

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

VL - 85

SP - 1710

EP - 1712

JO - Default journal

JF - Default journal

ER -