High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Y. Sano, T. Yamada, J. Mita, K. Kaifu, H. Ishikawa, T. Egawa, M. Umeno

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)


High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

Original languageEnglish
Number of pages2
Publication statusPublished - 2001
Externally publishedYes
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: 2001 Jun 252001 Jun 27


ConferenceDevice Research Conference (DRC)
Country/TerritoryUnited States
CityNotre Dame, IN

ASJC Scopus subject areas

  • General Engineering


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