High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

K. Shiojima, T. Makimura, T. Kosugi, S. Sugitani, N. Shigekawa, H. Ishikawa, T. Egawa

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

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Engineering & Materials Science