High-power, high-efficiency cell design for 26 GHz HBT power amplifier

S. Tanaka; S. Murakami; Y. Amamiya; H. Shimawaki; N. Furuhata; N. Goto; K. Honjo; Y. Ishida; Y. Saito; K. Yamamoto; M. Yajima; R. Temino; Y. Hisada

High-power, high-efficiency cell design for 26 GHz HBT power amplifier

S. Tanaka, S. Murakami, Y. Amamiya, H. Shimawaki, N. Furuhata, N. Goto, K. Honjo, Y. Ishida, Y. Saito, K. Yamamoto, M. Yajima, R. Temino, Y. Hisada

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19% PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 μm²) exhibited 740 mW output power equivalent to power density of 4.0 mW/μm², while a record high PAE of 42% was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near mmWave bands.

Original language	English
Pages (from-to)	843-846
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 1996
Event	Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA Duration: 1996 Jun 17 → 1996 Jun 21

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "High-power, high-efficiency cell design for 26 GHz HBT power amplifier",

abstract = "We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19% PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 μm2) exhibited 740 mW output power equivalent to power density of 4.0 mW/μm2, while a record high PAE of 42% was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near mmWave bands.",

author = "S. Tanaka and S. Murakami and Y. Amamiya and H. Shimawaki and N. Furuhata and N. Goto and K. Honjo and Y. Ishida and Y. Saito and K. Yamamoto and M. Yajima and R. Temino and Y. Hisada",

year = "1996",

language = "English",

volume = "2",

pages = "843--846",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) ; Conference date: 17-06-1996 Through 21-06-1996",

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TY - JOUR

T1 - High-power, high-efficiency cell design for 26 GHz HBT power amplifier

AU - Tanaka, S.

AU - Murakami, S.

AU - Amamiya, Y.

AU - Shimawaki, H.

AU - Furuhata, N.

AU - Goto, N.

AU - Honjo, K.

AU - Ishida, Y.

AU - Saito, Y.

AU - Yamamoto, K.

AU - Yajima, M.

AU - Temino, R.

AU - Hisada, Y.

PY - 1996

Y1 - 1996

N2 - We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19% PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 μm2) exhibited 740 mW output power equivalent to power density of 4.0 mW/μm2, while a record high PAE of 42% was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near mmWave bands.

AB - We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19% PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 μm2) exhibited 740 mW output power equivalent to power density of 4.0 mW/μm2, while a record high PAE of 42% was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near mmWave bands.

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M3 - Conference article

AN - SCOPUS:0029694278

SN - 0149-645X

VL - 2

SP - 843

EP - 846

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3)

Y2 - 17 June 1996 through 21 June 1996

ER -

High-power, high-efficiency cell design for 26 GHz HBT power amplifier

Abstract

ASJC Scopus subject areas

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