High reliability Cu interconnection utilizing a low contamination CoWP capping layer

T. Ishigami; T. Kurokawa; Y. Kakuhara; B. Withers; J. Jacobs; A. Kolics; I. Ivanov; M. Sekine; K. Ueno

High reliability Cu interconnection utilizing a low contamination CoWP capping layer

T. Ishigami, T. Kurokawa, Y. Kakuhara, B. Withers, J. Jacobs, A. Kolics, I. Ivanov, M. Sekine, K. Ueno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.

Original language	English
Title of host publication	Proceedings of the IEEE 2004 International Interconnect Technology Conference
Pages	75-77
Number of pages	3
Publication status	Published - 2004
Externally published	Yes
Event	Proceedings of the IEEE 2004 International Interconnect Technology Conference - Burlingame, CA, United States Duration: 2004 Jun 7 → 2004 Jun 9

Publication series

Name	Proceedings of the IEEE 2004 International Interconnect Technology Conference

Conference

Conference	Proceedings of the IEEE 2004 International Interconnect Technology Conference
Country/Territory	United States
City	Burlingame, CA
Period	04/6/7 → 04/6/9

ASJC Scopus subject areas

Engineering(all)

Cite this

Ishigami, T., Kurokawa, T., Kakuhara, Y., Withers, B., Jacobs, J., Kolics, A., Ivanov, I., Sekine, M., & Ueno, K. (2004). High reliability Cu interconnection utilizing a low contamination CoWP capping layer. In Proceedings of the IEEE 2004 International Interconnect Technology Conference (pp. 75-77). (Proceedings of the IEEE 2004 International Interconnect Technology Conference).

High reliability Cu interconnection utilizing a low contamination CoWP capping layer. / Ishigami, T.; Kurokawa, T.; Kakuhara, Y. et al.
Proceedings of the IEEE 2004 International Interconnect Technology Conference. 2004. p. 75-77 (Proceedings of the IEEE 2004 International Interconnect Technology Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ishigami, T, Kurokawa, T, Kakuhara, Y, Withers, B, Jacobs, J, Kolics, A, Ivanov, I, Sekine, M & Ueno, K 2004, High reliability Cu interconnection utilizing a low contamination CoWP capping layer. in Proceedings of the IEEE 2004 International Interconnect Technology Conference. Proceedings of the IEEE 2004 International Interconnect Technology Conference, pp. 75-77, Proceedings of the IEEE 2004 International Interconnect Technology Conference, Burlingame, CA, United States, 04/6/7.

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abstract = "Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.",

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AU - Ishigami, T.

AU - Kurokawa, T.

AU - Kakuhara, Y.

AU - Withers, B.

AU - Jacobs, J.

AU - Kolics, A.

AU - Ivanov, I.

AU - Sekine, M.

AU - Ueno, K.

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AB - Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.

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T3 - Proceedings of the IEEE 2004 International Interconnect Technology Conference

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High reliability Cu interconnection utilizing a low contamination CoWP capping layer

Abstract

Publication series

Conference

ASJC Scopus subject areas

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