High-speed InP/InGaAs DHBTs with ballistic collector launcher structure

A. Fujihara; Y. Ikenaga; H. Takahashi; M. Kawanaka; S. Tanaka

High-speed InP/InGaAs DHBTs with ballistic collector launcher structure

A. Fujihara, Y. Ikenaga, H. Takahashi, M. Kawanaka, S. Tanaka

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate high-speed InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with significantly improved collector carrier transport. The proposed collector design scheme allows for using moderate collector thickness to achieve high f_max (∼ 300 GHz) while maintaining high f_T (∼ 200 GHz). The DHBTs will meet the demand of ultra-high-speed applications for both high f_T and high f_max.

Original language	English
Pages (from-to)	772-775
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2001 Dec 1
Externally published	Yes
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2001 Dec 2 → 2001 Dec 5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "High-speed InP/InGaAs DHBTs with ballistic collector launcher structure",

abstract = "We demonstrate high-speed InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with significantly improved collector carrier transport. The proposed collector design scheme allows for using moderate collector thickness to achieve high fmax (∼ 300 GHz) while maintaining high fT (∼ 200 GHz). The DHBTs will meet the demand of ultra-high-speed applications for both high fT and high fmax.",

author = "A. Fujihara and Y. Ikenaga and H. Takahashi and M. Kawanaka and S. Tanaka",

year = "2001",

month = dec,

day = "1",

language = "English",

pages = "772--775",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

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TY - JOUR

T1 - High-speed InP/InGaAs DHBTs with ballistic collector launcher structure

AU - Fujihara, A.

AU - Ikenaga, Y.

AU - Takahashi, H.

AU - Kawanaka, M.

AU - Tanaka, S.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - We demonstrate high-speed InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with significantly improved collector carrier transport. The proposed collector design scheme allows for using moderate collector thickness to achieve high fmax (∼ 300 GHz) while maintaining high fT (∼ 200 GHz). The DHBTs will meet the demand of ultra-high-speed applications for both high fT and high fmax.

AB - We demonstrate high-speed InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with significantly improved collector carrier transport. The proposed collector design scheme allows for using moderate collector thickness to achieve high fmax (∼ 300 GHz) while maintaining high fT (∼ 200 GHz). The DHBTs will meet the demand of ultra-high-speed applications for both high fT and high fmax.

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UR - http://www.scopus.com/inward/citedby.url?scp=0035716675&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035716675

SN - 0163-1918

SP - 772

EP - 775

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

High-speed InP/InGaAs DHBTs with ballistic collector launcher structure

Abstract

ASJC Scopus subject areas

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