High-speed InP/InGaAs DHBTs with ballistic collector launcher structure

A. Fujihara, Y. Ikenaga, H. Takahashi, M. Kawanaka, S. Tanaka

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)


We demonstrate high-speed InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with significantly improved collector carrier transport. The proposed collector design scheme allows for using moderate collector thickness to achieve high fmax (∼ 300 GHz) while maintaining high fT (∼ 200 GHz). The DHBTs will meet the demand of ultra-high-speed applications for both high fT and high fmax.

Original languageEnglish
Pages (from-to)772-775
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2001 Dec 1
Externally publishedYes
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2001 Dec 22001 Dec 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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