| Original language | English |
|---|---|
| Pages (from-to) | C-9-3 |
| Journal | Default journal |
| Publication status | Published - 1998 Sept 1 |
High-Temperature Behaviors of GaN Schottky Barrier Diode
K. Nakamura, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno
Research output: Contribution to journal › Article › peer-review