TY - GEN
T1 - Highly c-axis oriented monocrystalline Pb(Zr, Ti)O3 based thin film on Si wafer by sputter deposition with fast cooling process
AU - Hanzawa, Hiroaki
AU - Yoshida, Shinya
AU - Wasa, Kiyotaka
AU - Tanaka, Shuji
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/20
Y1 - 2014/10/20
N2 - We have successfully obtained a highly c-axis oriented epitaxial Pb(Zr, Ti)O3 (PZT) based thin film, 0.06Pb(Mn1/3, Nb2/3)O3-0.94Pb(Zr0.5, Ti0.5)O3 (PMnN-PZT), on a (100) Si substrate by fast cooling of the substrate just after sputter deposition. The Si substrates were covered with SrRuO3//La0.5Sr0.5CoO3//CeO2//yttria-stabilized zirconia buffer layers. It is found that c-axis orientation ratio of the PMnN-PZT thin film has reached more than 75% owing to the fast cooling (∼-180°C/min) although a-axis orientation is normally predominant on a Si substrate in a conventional sputtering process. A piezoelectric unimorph microcantilever utilizing the PMnN-PZT thin film was fabricated for characterizing the dielectric and piezoelectric properties. No damage was observed after the microfabrication process. As a result, 1∼4-μm-thick PMnN-PZT thin films exhibited a piezoelectric coefficient as large as e31,f = ∼-14 C/m2 with a small dielectric constant of εr = ∼270. These unique properties can provide an excellent figure of merit, (e31,f)2/ε0εr = ∼80 GPa, for piezoelectric microelectro-mechanical systems (MEMS) sensors such as piezoelectric gyroscope. The present piezoelectric thin films are expected to be used for a variety of high-performance piezoelectric MEMS devices.
AB - We have successfully obtained a highly c-axis oriented epitaxial Pb(Zr, Ti)O3 (PZT) based thin film, 0.06Pb(Mn1/3, Nb2/3)O3-0.94Pb(Zr0.5, Ti0.5)O3 (PMnN-PZT), on a (100) Si substrate by fast cooling of the substrate just after sputter deposition. The Si substrates were covered with SrRuO3//La0.5Sr0.5CoO3//CeO2//yttria-stabilized zirconia buffer layers. It is found that c-axis orientation ratio of the PMnN-PZT thin film has reached more than 75% owing to the fast cooling (∼-180°C/min) although a-axis orientation is normally predominant on a Si substrate in a conventional sputtering process. A piezoelectric unimorph microcantilever utilizing the PMnN-PZT thin film was fabricated for characterizing the dielectric and piezoelectric properties. No damage was observed after the microfabrication process. As a result, 1∼4-μm-thick PMnN-PZT thin films exhibited a piezoelectric coefficient as large as e31,f = ∼-14 C/m2 with a small dielectric constant of εr = ∼270. These unique properties can provide an excellent figure of merit, (e31,f)2/ε0εr = ∼80 GPa, for piezoelectric microelectro-mechanical systems (MEMS) sensors such as piezoelectric gyroscope. The present piezoelectric thin films are expected to be used for a variety of high-performance piezoelectric MEMS devices.
KW - epitaxial PZT thin film on Si
KW - lead zirconate titanate (PZT)
KW - MEMS (Micro-electro Mechanical Systems)
KW - piezoelectric MEMS gyroscope
UR - http://www.scopus.com/inward/record.url?scp=84910093073&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84910093073&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2014.0222
DO - 10.1109/ULTSYM.2014.0222
M3 - Conference contribution
AN - SCOPUS:84910093073
T3 - IEEE International Ultrasonics Symposium, IUS
SP - 907
EP - 910
BT - IEEE International Ultrasonics Symposium, IUS
PB - IEEE Computer Society
T2 - 2014 IEEE International Ultrasonics Symposium, IUS 2014
Y2 - 3 September 2014 through 6 September 2014
ER -