We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e31,f = ~-11 C/m 2, with remarkably small dielectric constants, εr = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.
|Number of pages||7|
|Journal||IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control|
|Publication status||Published - 2014 Sept|
ASJC Scopus subject areas
- Acoustics and Ultrasonics
- Electrical and Electronic Engineering