Highly Reliable Interface of Self-Aligned CuSiN Process with Low-k SiC Barrier Dielectric (k=3.5) for 65nm Node and Beyond

T. Usami; T. Ide; Y. Kakuhara; Y. Ajima; K. Ueno; T. Maruyama; Y. Yu; E Apen; K. Chattopadhyay; B. van Schravendijk; N. Oda; M. Sekine

Highly Reliable Interface of Self-Aligned CuSiN Process with Low-k SiC Barrier Dielectric (k=3.5) for 65nm Node and Beyond

T. Usami, T. Ide, Y. Kakuhara, Y. Ajima, K. Ueno, T. Maruyama, Y. Yu, E Apen, K. Chattopadhyay, B. van Schravendijk, N. Oda, M. Sekine

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Original language	English
Pages (from-to)	125-127
Journal	Proc. 2006 Int. Interconnect Tech. Conf.
Publication status	Published - 2006 Jun 6

Cite this

@article{b28b99ef040040758b3de57e35bd1296,

title = "Highly Reliable Interface of Self-Aligned CuSiN Process with Low-k SiC Barrier Dielectric (k=3.5) for 65nm Node and Beyond",

author = "T. Usami and T. Ide and Y. Kakuhara and Y. Ajima and K. Ueno and T. Maruyama and Y. Yu and E Apen and K. Chattopadhyay and Schravendijk, {B. van} and N. Oda and M. Sekine",

year = "2006",

month = jun,

day = "6",

language = "English",

pages = "125--127",

journal = "Proc. 2006 Int. Interconnect Tech. Conf.",

}

TY - JOUR

T1 - Highly Reliable Interface of Self-Aligned CuSiN Process with Low-k SiC Barrier Dielectric (k=3.5) for 65nm Node and Beyond

AU - Usami, T.

AU - Ide, T.

AU - Kakuhara, Y.

AU - Ajima, Y.

AU - Ueno, K.

AU - Maruyama, T.

AU - Yu, Y.

AU - Apen, E

AU - Chattopadhyay, K.

AU - Schravendijk, B. van

AU - Oda, N.

AU - Sekine, M.

PY - 2006/6/6

Y1 - 2006/6/6

M3 - Article

SP - 125

EP - 127

JO - Proc. 2006 Int. Interconnect Tech. Conf.

JF - Proc. 2006 Int. Interconnect Tech. Conf.

ER -