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Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
S. Arulkumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jimbo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka, M. Tanaka, O. Oda
Research output: Contribution to journal › Article › peer-review
66
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(Scopus)