In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) Surfaces

H. Irie, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	724-725
Journal	Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
Publication status	Published - 2004 Sept 1

Cite this

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title = "In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) Surfaces",

author = "H. Irie and K. Kita and K. Kyuno and A. Toriumi",

year = "2004",

month = sep,

day = "1",

language = "English",

pages = "724--725",

journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

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TY - JOUR

T1 - In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) Surfaces

AU - Irie, H.

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

SP - 724

EP - 725

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

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