In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si

H. Irie; K. Kita; K. Kyuno; A. Toriumi

In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si

H. Irie, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journal › Conference article › peer-review

Abstract

An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.

Original language	English
Pages (from-to)	225-228
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 2004
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{7c69d754f79a4ce5a549967c538699c1,

title = "In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si",

abstract = "An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.",

author = "H. Irie and K. Kita and K. Kyuno and A. Toriumi",

note = "Funding Information: We are grateful to J.Koga, S.Saito, Y.Harada, Y.Sugiyama and S.Nishikawa in STARC (Semiconductor Technology Academic Research Center) for intensive discussions.; IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

year = "2004",

language = "English",

pages = "225--228",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si

AU - Irie, H.

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

N1 - Funding Information: We are grateful to J.Koga, S.Saito, Y.Harada, Y.Sugiyama and S.Nishikawa in STARC (Semiconductor Technology Academic Research Center) for intensive discussions.

PY - 2004

Y1 - 2004

N2 - An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.

AB - An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.

UR - http://www.scopus.com/inward/record.url?scp=21644454069&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21644454069&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:21644454069

SN - 0163-1918

SP - 225

EP - 228

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this