Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Kazuya Yuge; Toshihide Nabatame; Yoshihiro Irokawa; Akihiko Ohi; Naoki Ikeda; Akira Uedono; Liwen Sang; Yasuo Koide; Tomoji Ohishi

doi:10.1109/EDTM.2019.8731166

Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN

Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Akira Uedono, Liwen Sang, Yasuo Koide, Tomoji Ohishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al₂O₃/n-GaN capacitors in shallow (around E_c) and deep (around E_v) band regions. Interface state density (D_it) estimated by conductance method increased in shallow band region at Al₂O₃/n-GaN interface after PDA at 900°C. In contrast, another D_it estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from V_fb shift also decreased after PDA at 900°C.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	368-370
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731166
Publication status	Published - 2019 Mar
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 2019 Mar 12 → 2019 Mar 15

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	19/3/12 → 19/3/15

Keywords

AlO and Interface
GaN

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Hardware and Architecture

Access to Document

10.1109/EDTM.2019.8731166

Cite this

Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., Sang, L., Koide, Y., & Ohishi, T. (2019). Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 368-370). [8731166] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731166

Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. / Yuge, Kazuya; Nabatame, Toshihide; Irokawa, Yoshihiro et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 368-370 8731166 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yuge, K, Nabatame, T, Irokawa, Y, Ohi, A, Ikeda, N, Uedono, A, Sang, L, Koide, Y & Ohishi, T 2019, Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731166, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 368-370, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 19/3/12. https://doi.org/10.1109/EDTM.2019.8731166

Yuge K, Nabatame T, Irokawa Y, Ohi A, Ikeda N, Uedono A et al. Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 368-370. 8731166. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731166

Yuge, Kazuya ; Nabatame, Toshihide ; Irokawa, Yoshihiro et al. / Influence of post-deposition annealing on interface characteristics at Al₂O₃/n-GaN. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 368-370 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

@inproceedings{00422c2e176e4b68bb9ab48e72a1f260,

title = "Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN",

abstract = "We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.",

keywords = "AlO and Interface, GaN",

author = "Kazuya Yuge and Toshihide Nabatame and Yoshihiro Irokawa and Akihiko Ohi and Naoki Ikeda and Akira Uedono and Liwen Sang and Yasuo Koide and Tomoji Ohishi",

note = "Funding Information: This work was supported in part by the MEXT Program for the Research and Development of Next-generation Semiconductors to Realize an Energy-saving Society. Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731166",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "368--370",

booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

}

TY - GEN

T1 - Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

AU - Yuge, Kazuya

AU - Nabatame, Toshihide

AU - Irokawa, Yoshihiro

AU - Ohi, Akihiko

AU - Ikeda, Naoki

AU - Uedono, Akira

AU - Sang, Liwen

AU - Koide, Yasuo

AU - Ohishi, Tomoji

N1 - Funding Information: This work was supported in part by the MEXT Program for the Research and Development of Next-generation Semiconductors to Realize an Energy-saving Society. Publisher Copyright: © 2019 IEEE.

PY - 2019/3

Y1 - 2019/3

N2 - We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.

AB - We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.

KW - AlO and Interface

KW - GaN

UR - http://www.scopus.com/inward/record.url?scp=85067790296&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85067790296&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2019.8731166

DO - 10.1109/EDTM.2019.8731166

M3 - Conference contribution

AN - SCOPUS:85067790296

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 368

EP - 370

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Y2 - 12 March 2019 through 15 March 2019

ER -