Influence of Postdeposition Cooling Atmosphere  on Thermoelectric Properties of 2% Al-Doped ZnO  Thin Films Grown by Pulsed Laser Deposition

S. Saini; P. Mele; H. Honda; K. Matsumoto; K. Miyazaki; L. Molina Luna; P. E. Hopkins

doi:10.1007/s11664-014-3471-0

Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition

S. Saini, P. Mele, H. Honda, K. Matsumoto, K. Miyazaki, L. Molina Luna, P. E. Hopkins

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al₂O₃) substrates at various deposition temperatures (400^∘C to 600^∘C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (10²⁰cm^-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10^-3Wm^-1K^-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600^∘C.

Original language	English
Pages (from-to)	1547-1553
Number of pages	7
Journal	Journal of Electronic Materials
Volume	44
Issue number	6
DOIs	https://doi.org/10.1007/s11664-014-3471-0
Publication status	Published - 2015 Jun 1
Externally published	Yes

Keywords

Al-doped ZnO thin films
Seebeck coefficient
c-Axis orientation
power factor
pulsed laser deposition
thermoelectric oxides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-014-3471-0

Cite this

@article{3182c7e29a444c058ea9b6bba1ff5c2d,

title = "Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition",

abstract = "We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al2O3) substrates at various deposition temperatures (400∘C to 600∘C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (1020cm-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10-3Wm-1K-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600∘C.",

keywords = "Al-doped ZnO thin films, Seebeck coefficient, c-Axis orientation, power factor, pulsed laser deposition, thermoelectric oxides",

author = "S. Saini and P. Mele and H. Honda and K. Matsumoto and K. Miyazaki and Luna, {L. Molina} and Hopkins, {P. E.}",

note = "Publisher Copyright: {\textcopyright} 2014, The Minerals, Metals & Materials Society.",

year = "2015",

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doi = "10.1007/s11664-014-3471-0",

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AU - Saini, S.

AU - Mele, P.

AU - Honda, H.

AU - Matsumoto, K.

AU - Miyazaki, K.

AU - Luna, L. Molina

AU - Hopkins, P. E.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al2O3) substrates at various deposition temperatures (400∘C to 600∘C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (1020cm-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10-3Wm-1K-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600∘C.

AB - We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al2O3) substrates at various deposition temperatures (400∘C to 600∘C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (1020cm-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10-3Wm-1K-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600∘C.

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