TY - JOUR
T1 - InGaN Multiple-Quantum-Well Light Emitting Diodes on Si(111) Substrates
AU - Zhang, B. J.
AU - Egawa, T.
AU - Ishikawa, H.
AU - Nishikawa, N.
AU - Jimbo, T.
AU - Umeno, M.
PY - 2001/11/1
Y1 - 2001/11/1
N2 - An intermediate layer consisting of AIN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage te about 8.0 and 16.0 V for top and backside n-type electrodes, respectively. The EL peaks at ∼506 nm correspond to near band edge luminescence. The full width at half maximum of EL spectrum is 32 run at 20 mA current. The output power is 23.0 and 19.4 μW at 20 mA for top and backside n-type electrodes, respectively. To our knowledge, this value is the best result of nitride LEDs grown on Si substrate even though it is less than the one on sapphire and SiC substrates.
AB - An intermediate layer consisting of AIN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage te about 8.0 and 16.0 V for top and backside n-type electrodes, respectively. The EL peaks at ∼506 nm correspond to near band edge luminescence. The full width at half maximum of EL spectrum is 32 run at 20 mA current. The output power is 23.0 and 19.4 μW at 20 mA for top and backside n-type electrodes, respectively. To our knowledge, this value is the best result of nitride LEDs grown on Si substrate even though it is less than the one on sapphire and SiC substrates.
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U2 - 10.1002/1521-396X(200111)188:1<151::AID-PSSA151>3.0.CO;2-4
DO - 10.1002/1521-396X(200111)188:1<151::AID-PSSA151>3.0.CO;2-4
M3 - Article
AN - SCOPUS:1942489275
SN - 0031-8965
VL - 188
SP - 151
EP - 154
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 1
ER -