Instability of Si-F bonds in fluorinated silicon oxide (SiOF) films formed by various techniques

Engineering & Materials Science

• Silicon oxides 100%
• Oxide films 85%
• Chemical vapor deposition 42%
• Vapors 32%
• Glass 29%
• Liquids 21%
• Temperature 16%
• Fluorine 11%
• Refractive index 10%
• Dielectric films 6%
• Electric wiring 4%
• Etching 4%
• Atoms 4%
• Corrosion 3%
• Gases 2%
• Water 2%

Physics & Astronomy

• silicon oxides 72%
• oxide films 62%
• vapor deposition 26%
• liquid phases 26%
• vapors 26%
• room temperature 21%
• glass 20%
• absorptivity 13%
• fluorine 7%
• refractivity 5%
• conduction 5%
• wiring 4%
• interlayers 3%
• corrosion 3%
• etching 2%
• water 2%
• gases 1%
• atoms 1%

Chemical Compounds

• Silicon Oxide 85%
• Liquid Film 33%
• Ambient Reaction Temperature 20%
• Pressure 16%
• Absorption Coefficient 16%
• Liquid 15%
• Refractive Index 7%
• Fluorine Atom 6%
• Dielectric Film 5%
• Etching 3%
• Chemical Vapour Deposition 3%
• Corrosion 2%
• Gas 1%
• Purity 1%
• Reduction 1%
• Time 1%