Abstract
Wafer direct bonding is a technique for integration of dissimilar materials without any adhesives. This technique is applied to the bonding between III-V compound semiconductors and garnet crystals, to integrate a laser diode and an optical isolator. The isolator is contacted with the terraced laser diode by wafer bonding and heat treatment in hydrogen ambience.
Original language | English |
---|---|
Number of pages | 1 |
Publication status | Published - 2000 Jan 1 |
Externally published | Yes |
Event | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France Duration: 2000 Sept 10 → 2000 Sept 15 |
Other
Other | 2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) |
---|---|
City | Nice, France |
Period | 00/9/10 → 00/9/15 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering