Investigation on SnS film by RF sputtering for photovoltaic application

Wei Guang-Pu; Zhang Zhi-Lin; Zhao Wei-Ming; Gao Xiang-Hong; Chen Wei-Qun; Hiromasa Tanamura; Masaki Yamaguchi; Hidenori Noguchi; Takao Nagatomo; Osamu Omoto

Investigation on SnS film by RF sputtering for photovoltaic application

Wei Guang-Pu, Zhang Zhi-Lin, Zhao Wei-Ming, Gao Xiang-Hong, Chen Wei-Qun, Hiromasa Tanamura, Masaki Yamaguchi, Hidenori Noguchi, Takao Nagatomo, Osamu Omoto

Research output: Contribution to journal › Conference article › peer-review

34 Citations (Scopus)

Abstract

Tin sulfide (SnS) films were prepared by RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400°C), the n-type SnS films were obtained.

Original language	English
Pages (from-to)	365-368
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	1
Publication status	Published - 1994 Dec 1
Externally published	Yes
Event	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: 1994 Dec 5 → 1994 Dec 9

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

@article{c357bf467c5a437285668ac7878afe6b,

title = "Investigation on SnS film by RF sputtering for photovoltaic application",

abstract = "Tin sulfide (SnS) films were prepared by RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400°C), the n-type SnS films were obtained.",

author = "Wei Guang-Pu and Zhang Zhi-Lin and Zhao Wei-Ming and Gao Xiang-Hong and Chen Wei-Qun and Hiromasa Tanamura and Masaki Yamaguchi and Hidenori Noguchi and Takao Nagatomo and Osamu Omoto",

year = "1994",

month = dec,

day = "1",

language = "English",

volume = "1",

pages = "365--368",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) ; Conference date: 05-12-1994 Through 09-12-1994",

}

TY - JOUR

T1 - Investigation on SnS film by RF sputtering for photovoltaic application

AU - Guang-Pu, Wei

AU - Zhi-Lin, Zhang

AU - Wei-Ming, Zhao

AU - Xiang-Hong, Gao

AU - Wei-Qun, Chen

AU - Tanamura, Hiromasa

AU - Yamaguchi, Masaki

AU - Noguchi, Hidenori

AU - Nagatomo, Takao

AU - Omoto, Osamu

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Tin sulfide (SnS) films were prepared by RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400°C), the n-type SnS films were obtained.

AB - Tin sulfide (SnS) films were prepared by RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400°C), the n-type SnS films were obtained.

UR - http://www.scopus.com/inward/record.url?scp=0028717252&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028717252&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028717252

SN - 0160-8371

VL - 1

SP - 365

EP - 368

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)

Y2 - 5 December 1994 through 9 December 1994

ER -

Investigation on SnS film by RF sputtering for photovoltaic application

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this