Abstract
The Si monolithic microwave integrated circuits (MMIC) with high-performance Si devices or on-chip inductors are limited to the X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMICs uses 3D Masterslice MMIC technology that provides a separation between passive circuits and the low-resistivity Si substrate that results in low-loss transmission lines with loss competitive with that of coplanar waveguides formed on a GaAs substrate. The Masterslice Si MMIC that is the same as those demonstrated using the GaAs substrate reduces turn-around-time (TAT) and fabrication cost.
| Original language | English |
|---|---|
| Pages (from-to) | 252-253, 445 |
| Journal | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
| Publication status | Published - 1998 Jan 1 |
| Event | Proceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA Duration: 1998 Feb 5 → 1998 Feb 7 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering