K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology

K. Nishikawa, I. Toyoda, K. Kamogawa, T. Tokumitsu, C. Yamaguchi, M. Hirano

    Research output: Contribution to journalConference articlepeer-review

    2 Citations (Scopus)


    The Si monolithic microwave integrated circuits (MMIC) with high-performance Si devices or on-chip inductors are limited to the X-band operation due to low resistivity of the silicon substrate with resulting high transmission loss. This K-band Si MMICs uses 3D Masterslice MMIC technology that provides a separation between passive circuits and the low-resistivity Si substrate that results in low-loss transmission lines with loss competitive with that of coplanar waveguides formed on a GaAs substrate. The Masterslice Si MMIC that is the same as those demonstrated using the GaAs substrate reduces turn-around-time (TAT) and fabrication cost.

    Original languageEnglish
    Pages (from-to)252-253, 445
    JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
    Publication statusPublished - 1998 Jan 1
    EventProceedings of the 1998 IEEE 45th International Solid-State Circuits Conference, ISSCC - San Francisco, CA, USA
    Duration: 1998 Feb 51998 Feb 7

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering


    Dive into the research topics of 'K-band Si MMIC amplifier and mixer using three-dimensional Masterslice MMIC technology'. Together they form a unique fingerprint.

    Cite this