Laser-induced damage threshold and laser processing of GaN

Hong Bo Sun; Saulius Juodkazis; P. G. Eliseev; T. Sugahara; Tao Wang; Shigeki Matsuo; Shiro Sakai; Hiroaki Misawa

doi:10.1117/12.376976

Laser-induced damage threshold and laser processing of GaN

Hong Bo Sun, Saulius Juodkazis, P. G. Eliseev, T. Sugahara, Tao Wang, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22λ/NA, where NA = 0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.

Original language	English
Pages (from-to)	311-322
Number of pages	12
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3885
DOIs	https://doi.org/10.1117/12.376976
Publication status	Published - 2000
Externally published	Yes
Event	High-Power Laser Ablation II - Osaka, Jpn Duration: 1999 Nov 1 → 1999 Nov 5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Laser-induced damage threshold and laser processing of GaN",

abstract = "The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22λ/NA, where NA = 0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.",

author = "Sun, {Hong Bo} and Saulius Juodkazis and Eliseev, {P. G.} and T. Sugahara and Tao Wang and Shigeki Matsuo and Shiro Sakai and Hiroaki Misawa",

year = "2000",

doi = "10.1117/12.376976",

language = "English",

volume = "3885",

pages = "311--322",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "High-Power Laser Ablation II ; Conference date: 01-11-1999 Through 05-11-1999",

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T1 - Laser-induced damage threshold and laser processing of GaN

AU - Sun, Hong Bo

AU - Juodkazis, Saulius

AU - Eliseev, P. G.

AU - Sugahara, T.

AU - Wang, Tao

AU - Matsuo, Shigeki

AU - Sakai, Shiro

AU - Misawa, Hiroaki

PY - 2000

Y1 - 2000

N2 - The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22λ/NA, where NA = 0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.

AB - The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40x magnification of dry objective lens (a lateral size of focal spot roughly at 1.22λ/NA, where NA = 0.65). The critical energy of sub-threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.

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DO - 10.1117/12.376976

M3 - Conference article

AN - SCOPUS:0033905467

SN - 0277-786X

VL - 3885

SP - 311

EP - 322

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - High-Power Laser Ablation II

Y2 - 1 November 1999 through 5 November 1999

ER -

Laser-induced damage threshold and laser processing of GaN

Abstract

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