Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content

M. Kawaguchi; T. Miyamoto; S. Kawakami; S. Minobe; Atsushi Saitoh; F. Koyama

doi:10.1109/CLEOPR.2003.1277044

Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content

M. Kawaguchi, T. Miyamoto, S. Kawakami, S. Minobe, Atsushi Saitoh, F. Koyama

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.

Original language	English
Title of host publication	CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	496
Number of pages	1
Volume	2
ISBN (Electronic)	0780377664
DOIs	https://doi.org/10.1109/CLEOPR.2003.1277044
Publication status	Published - 2003
Externally published	Yes
Event	5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, Taiwan, Province of China Duration: 2003 Dec 15 → 2003 Dec 19

Other

Other	5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
Country/Territory	Taiwan, Province of China
City	Taipei
Period	03/12/15 → 03/12/19

ASJC Scopus subject areas

Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/CLEOPR.2003.1277044

Cite this

Kawaguchi, M., Miyamoto, T., Kawakami, S., Minobe, S., Saitoh, A., & Koyama, F. (2003). Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. In CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings (Vol. 2, pp. 496). [1277044] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2003.1277044

Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. / Kawaguchi, M.; Miyamoto, T.; Kawakami, S. et al.

CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Vol. 2 Institute of Electrical and Electronics Engineers Inc., 2003. p. 496 1277044.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawaguchi, M, Miyamoto, T, Kawakami, S, Minobe, S, Saitoh, A & Koyama, F 2003, Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. in CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. vol. 2, 1277044, Institute of Electrical and Electronics Engineers Inc., pp. 496, 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003, Taipei, Taiwan, Province of China, 03/12/15. https://doi.org/10.1109/CLEOPR.2003.1277044

Kawaguchi M, Miyamoto T, Kawakami S, Minobe S, Saitoh A, Koyama F. Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. In CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Vol. 2. Institute of Electrical and Electronics Engineers Inc. 2003. p. 496. 1277044 doi: 10.1109/CLEOPR.2003.1277044

Kawaguchi, M. ; Miyamoto, T. ; Kawakami, S. et al. / Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content. CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Vol. 2 Institute of Electrical and Electronics Engineers Inc., 2003. pp. 496

@inproceedings{c5b6834cf792471e94ea7e8e51ee95a5,

title = "Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content",

abstract = "We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.",

author = "M. Kawaguchi and T. Miyamoto and S. Kawakami and S. Minobe and Atsushi Saitoh and F. Koyama",

year = "2003",

doi = "10.1109/CLEOPR.2003.1277044",

language = "English",

volume = "2",

pages = "496",

booktitle = "CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 ; Conference date: 15-12-2003 Through 19-12-2003",

}

TY - GEN

T1 - Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content

AU - Kawaguchi, M.

AU - Miyamoto, T.

AU - Kawakami, S.

AU - Minobe, S.

AU - Saitoh, Atsushi

AU - Koyama, F.

PY - 2003

Y1 - 2003

N2 - We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.

AB - We found that lasing wavelength, threshold and efficiency of GaInNAs/GaAsP strain-compensated lasers depends on the P content in GaAsP barrier layer. For a P content of 11%, we obtained improved threshold and efficiency compared with GaAs barrier.

UR - http://www.scopus.com/inward/record.url?scp=84955295754&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84955295754&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.2003.1277044

DO - 10.1109/CLEOPR.2003.1277044

M3 - Conference contribution

AN - SCOPUS:84955295754

VL - 2

SP - 496

BT - CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003

Y2 - 15 December 2003 through 19 December 2003

ER -

Lasing characteristics of GaInNAs/GaAsP strain-compensated lasers for various phosphorous content

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