Lateral and vertical scaling of high-fmax InP-based HBTs

Shinichi Tanaka; Yoshifumi Ikenaga; Akira Fujihara

Lateral and vertical scaling of high-f_max InP-based HBTs

Shinichi Tanaka, Yoshifumi Ikenaga, Akira Fujihara

Research output: Contribution to journal › Article › peer-review

Abstract

Design approach to improving f_max of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving f _T) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on f_max. The model was compared with measurements of single and double heterojunction bipolar transistors with different f_T and various emitter sizes. While a high f_max of 313 GHz was achieved using submicron HBT with high f _T, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.

Original language	English
Pages (from-to)	924-928
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E87-C
Issue number	6
Publication status	Published - 2004 Jun
Externally published	Yes

Keywords

HBT
Indium phosphide (InP)
Maximum frequency of oscillation
Scaling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Lateral and vertical scaling of high-fmax InP-based HBTs",

abstract = "Design approach to improving fmax of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving f T) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on fmax. The model was compared with measurements of single and double heterojunction bipolar transistors with different fT and various emitter sizes. While a high fmax of 313 GHz was achieved using submicron HBT with high f T, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.",

keywords = "HBT, Indium phosphide (InP), Maximum frequency of oscillation, Scaling",

author = "Shinichi Tanaka and Yoshifumi Ikenaga and Akira Fujihara",

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AU - Tanaka, Shinichi

AU - Ikenaga, Yoshifumi

AU - Fujihara, Akira

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Y1 - 2004/6

N2 - Design approach to improving fmax of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving f T) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on fmax. The model was compared with measurements of single and double heterojunction bipolar transistors with different fT and various emitter sizes. While a high fmax of 313 GHz was achieved using submicron HBT with high f T, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.

AB - Design approach to improving fmax of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving f T) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on fmax. The model was compared with measurements of single and double heterojunction bipolar transistors with different fT and various emitter sizes. While a high fmax of 313 GHz was achieved using submicron HBT with high f T, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.

KW - HBT

KW - Indium phosphide (InP)

KW - Maximum frequency of oscillation

KW - Scaling

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ER -

Lateral and vertical scaling of high-f_max InP-based HBTs

Abstract

Keywords

ASJC Scopus subject areas

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