Lateral and vertical scaling of high-fmax InP-based HBTs

Shinichi Tanaka, Yoshifumi Ikenaga, Akira Fujihara

Research output: Contribution to journalArticlepeer-review


Design approach to improving fmax of InP-based HBTs by combining lateral scaling (lithographic scaling) and vertical scaling (improving f T) is discussed. An HBT scaling model is formulated to provide means of analyzing the essential impact of scaling on fmax. The model was compared with measurements of single and double heterojunction bipolar transistors with different fT and various emitter sizes. While a high fmax of 313 GHz was achieved using submicron HBT with high f T, it was found that further improvement could have been obtained by reducing the emitter resistance, which has imposed considerable limit on lateral scaling.

Original languageEnglish
Pages (from-to)924-928
Number of pages5
JournalIEICE Transactions on Electronics
Issue number6
Publication statusPublished - 2004 Jun
Externally publishedYes


  • HBT
  • Indium phosphide (InP)
  • Maximum frequency of oscillation
  • Scaling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Lateral and vertical scaling of high-fmax InP-based HBTs'. Together they form a unique fingerprint.

Cite this