Loss increase of (LuNdBi)3(FeAl)5 O12 films caused by sputter etching

Hideki Yokoi; Tetsuya Mizumoto; Takehiro Ida; Kazuki Kozakai Kozakai; Yoshiyuki Naito

doi:10.1143/JJAP.33.6355

Loss increase of (LuNdBi)₃(FeAl)₅ O₁₂ films caused by sputter etching

Hideki Yokoi, Tetsuya Mizumoto, Takehiro Ida, Kazuki Kozakai Kozakai, Yoshiyuki Naito

Research output: Contribution to journal › Article › peer-review

Abstract

Rib waveguides, which are made of magnetic garnet films of composition (LuNdBi)₃(FeAl)₅O₁₂ (LNB), fabricated by Ar sputter etching have large propagation loss in comparison with LNB slab waveguides. X-ray photoelectron spectroscopy (XPS) is used to investigate chemical states of constituent elements existing in the surface layer where a Ti mask has been deposited during the etching process. The analysis shows that Fe chemical shift due to Ar⁺ ion bombardment can cause increase in the optical absorption loss, and hence the propagation loss. It is effective for suppressing the loss increase to employ a SiO₂ mask deposited onto LNB film instead of a Ti mask.

Original language	English
Pages (from-to)	635-639
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	33
Issue number	11R
DOIs	https://doi.org/10.1143/JJAP.33.6355
Publication status	Published - 1994 Nov
Externally published	Yes

Keywords

(LuNdBi)(FeAl) O
Optical absorption loss
Reactive ion etching
Rib waveguide
Sputter etching
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.33.6355

Cite this

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title = "Loss increase of (LuNdBi)3(FeAl)5 O12 films caused by sputter etching",

abstract = "Rib waveguides, which are made of magnetic garnet films of composition (LuNdBi)3(FeAl)5O12 (LNB), fabricated by Ar sputter etching have large propagation loss in comparison with LNB slab waveguides. X-ray photoelectron spectroscopy (XPS) is used to investigate chemical states of constituent elements existing in the surface layer where a Ti mask has been deposited during the etching process. The analysis shows that Fe chemical shift due to Ar+ ion bombardment can cause increase in the optical absorption loss, and hence the propagation loss. It is effective for suppressing the loss increase to employ a SiO2 mask deposited onto LNB film instead of a Ti mask.",

keywords = "(LuNdBi)(FeAl) O, Optical absorption loss, Reactive ion etching, Rib waveguide, Sputter etching, X-ray photoelectron spectroscopy",

author = "Hideki Yokoi and Tetsuya Mizumoto and Takehiro Ida and Kozakai, {Kazuki Kozakai} and Yoshiyuki Naito",

year = "1994",

month = nov,

doi = "10.1143/JJAP.33.6355",

language = "English",

volume = "33",

pages = "635--639",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11R",

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T1 - Loss increase of (LuNdBi)3(FeAl)5 O12 films caused by sputter etching

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

AU - Ida, Takehiro

AU - Kozakai, Kazuki Kozakai

AU - Naito, Yoshiyuki

PY - 1994/11

Y1 - 1994/11

N2 - Rib waveguides, which are made of magnetic garnet films of composition (LuNdBi)3(FeAl)5O12 (LNB), fabricated by Ar sputter etching have large propagation loss in comparison with LNB slab waveguides. X-ray photoelectron spectroscopy (XPS) is used to investigate chemical states of constituent elements existing in the surface layer where a Ti mask has been deposited during the etching process. The analysis shows that Fe chemical shift due to Ar+ ion bombardment can cause increase in the optical absorption loss, and hence the propagation loss. It is effective for suppressing the loss increase to employ a SiO2 mask deposited onto LNB film instead of a Ti mask.

AB - Rib waveguides, which are made of magnetic garnet films of composition (LuNdBi)3(FeAl)5O12 (LNB), fabricated by Ar sputter etching have large propagation loss in comparison with LNB slab waveguides. X-ray photoelectron spectroscopy (XPS) is used to investigate chemical states of constituent elements existing in the surface layer where a Ti mask has been deposited during the etching process. The analysis shows that Fe chemical shift due to Ar+ ion bombardment can cause increase in the optical absorption loss, and hence the propagation loss. It is effective for suppressing the loss increase to employ a SiO2 mask deposited onto LNB film instead of a Ti mask.

KW - (LuNdBi)(FeAl) O

KW - Optical absorption loss

KW - Reactive ion etching

KW - Rib waveguide

KW - Sputter etching

KW - X-ray photoelectron spectroscopy

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