Low-Frequency Noise Performance of Self-Aligned Inaias/InGaAs Heterojunction Bipolar Transistors

S. Tanaka; H. Hayama; K. Honjo; A. Furukawa; T. Baba; M. Mizuta

doi:10.1049/el:19900923

Low-Frequency Noise Performance of Self-Aligned Inaias/InGaAs Heterojunction Bipolar Transistors

S. Tanaka, H. Hayama, K. Honjo, A. Furukawa, T. Baba, M. Mizuta

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The first measurement of low-frequency noise performance for self-aligned InAIAs/InGaAs HBTs is reported. The l/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.

Original language	English
Pages (from-to)	1439-1441
Number of pages	3
Journal	Electronics Letters
Volume	26
Issue number	18
DOIs	https://doi.org/10.1049/el:19900923
Publication status	Published - 1990 Jan
Externally published	Yes

Keywords

Bipolar devices
Noise

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19900923

Cite this

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abstract = "The first measurement of low-frequency noise performance for self-aligned InAIAs/InGaAs HBTs is reported. The l/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.",

keywords = "Bipolar devices, Noise",

author = "S. Tanaka and H. Hayama and K. Honjo and A. Furukawa and T. Baba and M. Mizuta",

year = "1990",

month = jan,

doi = "10.1049/el:19900923",

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AU - Tanaka, S.

AU - Hayama, H.

AU - Honjo, K.

AU - Furukawa, A.

AU - Baba, T.

AU - Mizuta, M.

PY - 1990/1

Y1 - 1990/1

N2 - The first measurement of low-frequency noise performance for self-aligned InAIAs/InGaAs HBTs is reported. The l/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.

AB - The first measurement of low-frequency noise performance for self-aligned InAIAs/InGaAs HBTs is reported. The l/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.

KW - Bipolar devices

KW - Noise

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ER -

Low-Frequency Noise Performance of Self-Aligned Inaias/InGaAs Heterojunction Bipolar Transistors

Abstract

Keywords

ASJC Scopus subject areas

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