Low-resistance ohmic contacts to p-GaAs

Makoto Hirano; Fumihiko Yanagawa

doi:10.1143/JJAP.25.1268

Low-resistance ohmic contacts to p-GaAs

Makoto Hirano, Fumihiko Yanagawa

Research output: Contribution to journal › Comment/debate › peer-review

1 Citation (Scopus)

Abstract

A new metal structure consisting of AuZnNi/Ti/Au has been proposed for forming low-resistance ohmic contacts to p-GaAs with a fine-pattern definition. The dependency of the contact resistance on the Ti-layer thickness indicated that an optimum amount of Ti is requred for reducing the contact resistance. A minimun contact resistance (0.3 12-mm) was obtained with 150-nm thick Ti attached to Be-implanted p-GaAs at a dose of 6X 10¹³ cm^-3.

Original language	English
Pages (from-to)	1268-1269
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	25
Issue number	8
DOIs	https://doi.org/10.1143/JJAP.25.1268
Publication status	Published - 1986 Aug
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Low-resistance ohmic contacts to p-GaAs",

abstract = "A new metal structure consisting of AuZnNi/Ti/Au has been proposed for forming low-resistance ohmic contacts to p-GaAs with a fine-pattern definition. The dependency of the contact resistance on the Ti-layer thickness indicated that an optimum amount of Ti is requred for reducing the contact resistance. A minimun contact resistance (0.3 12-mm) was obtained with 150-nm thick Ti attached to Be-implanted p-GaAs at a dose of 6X 1013 cm-3.",

author = "Makoto Hirano and Fumihiko Yanagawa",

year = "1986",

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AB - A new metal structure consisting of AuZnNi/Ti/Au has been proposed for forming low-resistance ohmic contacts to p-GaAs with a fine-pattern definition. The dependency of the contact resistance on the Ti-layer thickness indicated that an optimum amount of Ti is requred for reducing the contact resistance. A minimun contact resistance (0.3 12-mm) was obtained with 150-nm thick Ti attached to Be-implanted p-GaAs at a dose of 6X 1013 cm-3.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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ER -

Low-resistance ohmic contacts to p-GaAs

Abstract

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