Low resistivity p-ZnO films fabricated by sol-gel spin coating

Yongge Cao; Lei Miao; Sakae Tanemura; Masaki Tanemura; Yohei Kuno; Yasuhiko Hayashi

doi:10.1063/1.2215618

Low resistivity p-ZnO films fabricated by sol-gel spin coating

Yongge Cao, Lei Miao, Sakae Tanemura, Masaki Tanemura, Yohei Kuno, Yasuhiko Hayashi

Research output: Contribution to journal › Article › peer-review

102 Citations (Scopus)

Abstract

N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10^-1 Ω cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces.

Original language	English
Article number	251116
Journal	Applied Physics Letters
Volume	88
Issue number	25
DOIs	https://doi.org/10.1063/1.2215618
Publication status	Published - 2006 Jun 19
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2215618

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abstract = "N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10-1 Ω cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces.",

author = "Yongge Cao and Lei Miao and Sakae Tanemura and Masaki Tanemura and Yohei Kuno and Yasuhiko Hayashi",

note = "Funding Information: This research was financially supported by the NITECH 21st Century COE Program for World Ceramic Center for Environmental Harmony. The authors greatly acknowledge Professor Dr. M. H. Xie in the University of Hong Kong for improving the quality of this letter. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Cao, Yongge

AU - Miao, Lei

AU - Tanemura, Sakae

AU - Tanemura, Masaki

AU - Kuno, Yohei

AU - Hayashi, Yasuhiko

N1 - Funding Information: This research was financially supported by the NITECH 21st Century COE Program for World Ceramic Center for Environmental Harmony. The authors greatly acknowledge Professor Dr. M. H. Xie in the University of Hong Kong for improving the quality of this letter. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006/6/19

Y1 - 2006/6/19

N2 - N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10-1 Ω cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces.

AB - N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10-1 Ω cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces.

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Low resistivity p-ZnO films fabricated by sol-gel spin coating

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