Luminescence and defect formation by visible and near-infrared irradiation of vitreous silica

Mitsuru Watanabe; Saulius Juodkazis; Hong Bo Sun; Shigeki Matsuo; Hiroaki Misawa

doi:10.1103/PhysRevB.60.9959

Luminescence and defect formation by visible and near-infrared irradiation of vitreous silica

Mitsuru Watanabe, Saulius Juodkazis, Hong Bo Sun, Shigeki Matsuo, Hiroaki Misawa

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the observation of photoluminescence (PL) originating from defects created by the visible and near-infrared irradiation of vitreous silica. Three PL bands at 283, 468, and 558 nm exhibited excitation spectra peaking at 250 nm, which corresponds to the oxygen vacancy defect V_Oabsorption. The observed PL bands can be attributed to the following transitions: the singlet-singlet transition of oxygen vacancy for 283 nm, and the radiative recombination of separated carriers on the vacancy-interstitial pairs (V_O;O_i) and (V_O;(O₂)_i) for 468 and 558 nm, respectively.

Original language	English
Pages (from-to)	9959-9964
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	60
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevB.60.9959
Publication status	Published - 1999 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Luminescence and defect formation by visible and near-infrared irradiation of vitreous silica",

abstract = "We report the observation of photoluminescence (PL) originating from defects created by the visible and near-infrared irradiation of vitreous silica. Three PL bands at 283, 468, and 558 nm exhibited excitation spectra peaking at 250 nm, which corresponds to the oxygen vacancy defect VOabsorption. The observed PL bands can be attributed to the following transitions: the singlet-singlet transition of oxygen vacancy for 283 nm, and the radiative recombination of separated carriers on the vacancy-interstitial pairs (VO;Oi) and (VO;(O2)i) for 468 and 558 nm, respectively.",

author = "Mitsuru Watanabe and Saulius Juodkazis and Sun, {Hong Bo} and Shigeki Matsuo and Hiroaki Misawa",

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AU - Watanabe, Mitsuru

AU - Juodkazis, Saulius

AU - Sun, Hong Bo

AU - Matsuo, Shigeki

AU - Misawa, Hiroaki

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We report the observation of photoluminescence (PL) originating from defects created by the visible and near-infrared irradiation of vitreous silica. Three PL bands at 283, 468, and 558 nm exhibited excitation spectra peaking at 250 nm, which corresponds to the oxygen vacancy defect VOabsorption. The observed PL bands can be attributed to the following transitions: the singlet-singlet transition of oxygen vacancy for 283 nm, and the radiative recombination of separated carriers on the vacancy-interstitial pairs (VO;Oi) and (VO;(O2)i) for 468 and 558 nm, respectively.

AB - We report the observation of photoluminescence (PL) originating from defects created by the visible and near-infrared irradiation of vitreous silica. Three PL bands at 283, 468, and 558 nm exhibited excitation spectra peaking at 250 nm, which corresponds to the oxygen vacancy defect VOabsorption. The observed PL bands can be attributed to the following transitions: the singlet-singlet transition of oxygen vacancy for 283 nm, and the radiative recombination of separated carriers on the vacancy-interstitial pairs (VO;Oi) and (VO;(O2)i) for 468 and 558 nm, respectively.

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Luminescence and defect formation by visible and near-infrared irradiation of vitreous silica

Abstract

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