Manipulating the Solubility of SnSe in SnTe by Br Doping for Improving the Thermoelectric Performance

Zhongwei Zhang, Wenjing Xu, Chengyan Liu, Fucong Li, Hengquan Yang, Xiaoyang Wang, Jie Gao, Chen Chen, Qian Zhang, Jing Liu, Xiaobo Bai, Ying Peng, Lei Miao

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


As a potential thermoelectric (TE) candidate with a rock salt structure similar to PbTe, SnTe has attracted much attention in recent years. However, a high carrier concentration caused by its inherent Sn vacancy severely lowers the TE performance. In this study, it is found that the introduction of Br on the basis of Se doping not only manipulates the carrier concentration but also reduces the solubility of SnSe in SnTe to form SnSe nanoprecipitates with suitable sizes (<10 nm) to scatter phonons. Thereby, the power factor is improved (∼1943 μW m-1 K-2) and the thermal conductivity is reduced (∼2.13 W m-1 K-1), pushing the zT value up to ∼0.75 (Sn1.03Se0.12Te0.870Br0.010) at 823 K. This study combines the carrier and chemical solubility engineering by halogen doping and provides an approach to improve the TE performance of materials with similar structures.

Original languageEnglish
Pages (from-to)13027-13035
Number of pages9
JournalACS Applied Energy Materials
Issue number11
Publication statusPublished - 2021 Nov 22


  • Br doping
  • SnSe nanoprecipitate
  • SnTe
  • thermal conductivity
  • thermoelectric performance

ASJC Scopus subject areas

  • Chemical Engineering (miscellaneous)
  • Energy Engineering and Power Technology
  • Electrochemistry
  • Materials Chemistry
  • Electrical and Electronic Engineering


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