Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET

Shohei Nakamura; Jun Kawasaki; Yuichi Kumagai; Kimiyoshi Usami

doi:10.1109/ULIS.2015.7063746

Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET

Shohei Nakamura, Jun Kawasaki, Yuichi Kumagai, Kimiyoshi Usami

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

This paper aims to measure the minimum energy point of logic circuits using SOTB and a bulk device, and to study the characteristics of logic circuits in SOTB at ultra-low voltage. We designed test chips including 32bit adder and 16bit multiplier circuits in 65nm SOTB and 65nm bulk devices. Measurement results revealed that the minimum energy of SOTB is about 39-49% smaller than that of the bulk The minimum energy voltage of SOTB is 0.25-0.3V, while that of the bulk is 0.35-0.45V. Measurement results also revealed that energy minimum voltage is proportional to the absolute temperature.

Original language	English
Title of host publication	EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	193-196
Number of pages	4
ISBN (Print)	9781479969111
DOIs	https://doi.org/10.1109/ULIS.2015.7063746
Publication status	Published - 2015 Mar 18
Event	2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy Duration: 2015 Jan 26 → 2015 Jan 28

Other

Other	2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
Country/Territory	Italy
City	Bologna
Period	15/1/26 → 15/1/28

Keywords

Energy minimum point
Silicon-on-Thin-BOX MOSFET
Ultra-low voltage

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ULIS.2015.7063746

Cite this

Nakamura, S., Kawasaki, J., Kumagai, Y., & Usami, K. (2015). Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (pp. 193-196). Article 7063746 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULIS.2015.7063746

Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. / Nakamura, Shohei; Kawasaki, Jun; Kumagai, Yuichi et al.
EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. p. 193-196 7063746.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakamura, S, Kawasaki, J, Kumagai, Y & Usami, K 2015, Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. in EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon., 7063746, Institute of Electrical and Electronics Engineers Inc., pp. 193-196, 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, Bologna, Italy, 15/1/26. https://doi.org/10.1109/ULIS.2015.7063746

Nakamura S, Kawasaki J, Kumagai Y, Usami K. Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc. 2015. p. 193-196. 7063746 doi: 10.1109/ULIS.2015.7063746

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abstract = "This paper aims to measure the minimum energy point of logic circuits using SOTB and a bulk device, and to study the characteristics of logic circuits in SOTB at ultra-low voltage. We designed test chips including 32bit adder and 16bit multiplier circuits in 65nm SOTB and 65nm bulk devices. Measurement results revealed that the minimum energy of SOTB is about 39-49% smaller than that of the bulk The minimum energy voltage of SOTB is 0.25-0.3V, while that of the bulk is 0.35-0.45V. Measurement results also revealed that energy minimum voltage is proportional to the absolute temperature.",

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Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET

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