Microwave/millimeter-wave power HBTs with regrown extrinsic base layers

Yasushi Amamiya, Chang Woo Kim, Norio Goto, Shin'ichi Tanaka, Naoki Furuhata, Hidenori Shimawaki, Kazuhiko Honjo

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


This paper reports the first power application of AlGaAs/GaAs HBTs with selective regrown extrinsic base layers. The ultra-high carbon doping of the regrown extrinsic base led to an extremely low base resistance, which resulted in fmax of 143 GHz. Reliability test under both thermal and current stresses demonstrated the stability of the regrown HBT structure. A three-dimensional thermal simulator was also developed to determine the suitable pattern layout for the multi-finger structure. A common base HBT with six emitter fingers (240 μ m2) delivered RF power performances of 365 mW CW output power with 23% power added efficiency and 9.1 dB power gain at 25.2 GHz.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1994 Dec 1
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1994 Dec 111994 Dec 14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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