TY - JOUR
T1 - No external load measurement strategy for micro thermoelectric generator based on high-performance Si1−x−yGexSny film
AU - Peng, Ying
AU - Zhu, Sijing
AU - Lai, Huajun
AU - Gao, Jie
AU - Kurosawa, Masashi
AU - Nakatsuka, Osamu
AU - Tanemura, Sakae
AU - Peng, Biaolin
AU - Miao, Lei
N1 - Funding Information:
This work was partly supported by PRESTO (Grant No. JPMJPR15R2) and CREST (Grant No. JPMJCR19Q5) from the JST in Japan, a research grant (Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development) from the MEXT in Japan, the National Natural Science Foundation of China (Grant Nos. 51772056, 51961011, 52061009), National Key Research and Development Program of China (No. 2017YFE0198000), Guangxi Natural Science Foundation of China (Grant No.2019GXNSFAA245039, 2017 GXNSFFA198015) and the open foundation of Guangxi Key laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University (Grant No.2020GXYSOF11).
Publisher Copyright:
© 2020 The Chinese Ceramic Society
PY - 2021/7
Y1 - 2021/7
N2 - In this study, a micro in-plane p-type thermoelectric generator (TEG), which consists of thin-film Si1−x−yGexSny ternary alloy semiconductor on insulator, is developed to make efficient use of waste heat such as human body. A power factor value as high as 1095 μWm−1K−2 had been achieved using B-ion implanted and short-term rapid thermal annealing (RTA) process. In addition, a measuring scheme for micro TEG without external load resistance was designed. In one measuring session, multiple parameters can be measured. The micro single-arm TEG prepared by semiconductor process can output 0.29 nW power at a temperature difference of 15 K, and a cross-sectional power density has reached up to 0.58 mW/cm2, which is a superior value for wearable device. The findings of this study have important reference value for wearable device performance improvement and output power measuring of micro TEG.
AB - In this study, a micro in-plane p-type thermoelectric generator (TEG), which consists of thin-film Si1−x−yGexSny ternary alloy semiconductor on insulator, is developed to make efficient use of waste heat such as human body. A power factor value as high as 1095 μWm−1K−2 had been achieved using B-ion implanted and short-term rapid thermal annealing (RTA) process. In addition, a measuring scheme for micro TEG without external load resistance was designed. In one measuring session, multiple parameters can be measured. The micro single-arm TEG prepared by semiconductor process can output 0.29 nW power at a temperature difference of 15 K, and a cross-sectional power density has reached up to 0.58 mW/cm2, which is a superior value for wearable device. The findings of this study have important reference value for wearable device performance improvement and output power measuring of micro TEG.
KW - Ambient power density
KW - No external load measurement
KW - P-type TEG
KW - SiGeSn thin film
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U2 - 10.1016/j.jmat.2020.12.002
DO - 10.1016/j.jmat.2020.12.002
M3 - Article
AN - SCOPUS:85103548028
SN - 2352-8478
VL - 7
SP - 665
EP - 671
JO - Journal of Materiomics
JF - Journal of Materiomics
IS - 4
ER -