TY - JOUR
T1 - Novel crystallization process for germanium thin films
T2 - Surfactant-crystallization method
AU - Miura, Hiroyuki
AU - Kamiko, Masao
AU - Kyuno, Kentaro
PY - 2013/1
Y1 - 2013/1
N2 - A new process called the surfactant-crystallization method is used to fabricate crystalline Ge thin films. By depositing Ge on a heated substrate, on which a Au film is predeposited, the formation of crystal Ge is confirmed at a substrate temperature as low as 200 °C and at a heating duration of only 60 s.
AB - A new process called the surfactant-crystallization method is used to fabricate crystalline Ge thin films. By depositing Ge on a heated substrate, on which a Au film is predeposited, the formation of crystal Ge is confirmed at a substrate temperature as low as 200 °C and at a heating duration of only 60 s.
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U2 - 10.7567/JJAP.52.010204
DO - 10.7567/JJAP.52.010204
M3 - Article
AN - SCOPUS:84872315151
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 1
M1 - 010204
ER -