Novel in-situ passivation of MoCl5 doped multilayer graphene with MoOx for low-resistance interconnects

K. Kawamoto; Y. Saito; M. Kenmoku; K. Ueno

doi:10.1109/EDTM.2017.7947586

Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects

K. Kawamoto, Y. Saito, M. Kenmoku, K. Ueno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

To improve the stability of multilayer graphene (MLG) doped with molybdenum pentachloride (MoCl₅) for low-resistance interconnects, we have newly developed an in-situ passivation process with molybdenum oxides. The improved air stability of dopants was confirmed with Raman spectroscopy by the direct MoO_x passivation at room temperature.

Original language	English
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	252-254
Number of pages	3
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947586
Publication status	Published - 2017 Jun 13
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: 2017 Feb 28 → 2017 Mar 2

Publication series

Name	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/Territory	Japan
City	Toyama
Period	17/2/28 → 17/3/2

Keywords

doping
graphene
interconnect

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM.2017.7947586

Cite this

Kawamoto, K., Saito, Y., Kenmoku, M., & Ueno, K. (2017). Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 252-254). Article 7947586 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947586

Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects. / Kawamoto, K.; Saito, Y.; Kenmoku, M. et al.
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 252-254 7947586 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kawamoto, K, Saito, Y, Kenmoku, M & Ueno, K 2017, Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947586, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 252-254, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 17/2/28. https://doi.org/10.1109/EDTM.2017.7947586

Kawamoto K, Saito Y, Kenmoku M, Ueno K. Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 252-254. 7947586. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). doi: 10.1109/EDTM.2017.7947586

Kawamoto, K. ; Saito, Y. ; Kenmoku, M. et al. / Novel in-situ passivation of MoCl₅ doped multilayer graphene with MoO_x for low-resistance interconnects. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 252-254 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

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abstract = "To improve the stability of multilayer graphene (MLG) doped with molybdenum pentachloride (MoCl5) for low-resistance interconnects, we have newly developed an in-situ passivation process with molybdenum oxides. The improved air stability of dopants was confirmed with Raman spectroscopy by the direct MoOx passivation at room temperature.",

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