Abstract
A novel fabrication technology has been developed to implement three-dimensional MMICs. This technology enables us to form a three-dimensional structure of interconnections in a 10-μm-thick polyimide insulator matrix ; for example, four horizontal metal layers, pillar-like vertical vias, and wall-like vertical microwires for shielding as a ground plane. Many passive elements and circuits can be formed in a small area in multiple levels with vertical structures, not only on GaAs IC chips but also on Si IC chips. Si masterslice MMIC, which are a typical example of three-dimensional MMICs, can be fabricated using this technology.
| Original language | English |
|---|---|
| Pages (from-to) | 1277-1283 |
| Number of pages | 7 |
| Journal | NTT R and D |
| Volume | 45 |
| Issue number | 12 |
| Publication status | Published - 1996 Dec 1 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering