Numerical analysis of drain lag and current collapse in AlGaN/GaN HEMTs

K. Horio, A. Nakajima

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	237-239
Journal	Proceedings of the 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), Venice, Italy
Publication status	Published - 2007 May 25

Cite this

@article{66b3aaa7d6964f0f95dfb027de0a67af,

title = "Numerical analysis of drain lag and current collapse in AlGaN/GaN HEMTs",

author = "K. Horio and A. Nakajima",

year = "2007",

month = may,

day = "25",

language = "English",

pages = "237--239",

journal = "Proceedings of the 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), Venice, Italy",

}

TY - JOUR

T1 - Numerical analysis of drain lag and current collapse in AlGaN/GaN HEMTs

AU - Horio, K.

AU - Nakajima, A.

PY - 2007/5/25

Y1 - 2007/5/25

M3 - Article

SP - 237

EP - 239

JO - Proceedings of the 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), Venice, Italy

JF - Proceedings of the 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007), Venice, Italy

ER -