Abstract
A numerical model for AlGaAs/GaAs HBTs is proposed in which the transport of electron energy is included by using 'hydrodynamic' equation derived from the Boltzmann equation. The results are compared with those by the conventional model, indicating the importance of the energy transport effects.
| Original language | English |
|---|---|
| Pages (from-to) | 279-282 |
| Number of pages | 4 |
| Journal | Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E |
| Volume | E69 |
| Issue number | 4 |
| Publication status | Published - 1986 Apr 1 |
| Event | Pap from 1986 Natl Conv IECE Jpn - Niigata, Jpn Duration: 1986 Mar 23 → 1986 Mar 26 |
ASJC Scopus subject areas
- Engineering(all)