Numerical analysis of GaAs MESFETs with a p-buffer layer on the semi-insulating substrate is presented in which impurity compensation by traps is included. Using a p-buffer layer is shown to be effective in minimising the short-channel effects as in the case of using a substrate with high density of traps.
|Number of pages||3|
|Publication status||Published - 1989 Sept 1|
- Integrated circuits
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering