Numerical analysis of impact ionization effects on turn-on characteristics in GaAs MESFETs

K. Horio, A. Wakabayashi, Y. Mitani

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	135-138
Journal	Proceedings of 2001 European Gallium Arsenide and Other Semiconductor Application Symposium (GAAS 2001), London, England
Publication status	Published - 2001 Sept 1

Cite this

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title = "Numerical analysis of impact ionization effects on turn-on characteristics in GaAs MESFETs",

author = "K. Horio and A. Wakabayashi and Y. Mitani",

year = "2001",

month = sep,

day = "1",

language = "English",

pages = "135--138",

journal = "Proceedings of 2001 European Gallium Arsenide and Other Semiconductor Application Symposium (GAAS 2001), London, England",

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TY - JOUR

T1 - Numerical analysis of impact ionization effects on turn-on characteristics in GaAs MESFETs

AU - Horio, K.

AU - Wakabayashi, A.

AU - Mitani, Y.

PY - 2001/9/1

Y1 - 2001/9/1

M3 - Article

SP - 135

EP - 138

JO - Proceedings of 2001 European Gallium Arsenide and Other Semiconductor Application Symposium (GAAS 2001), London, England

JF - Proceedings of 2001 European Gallium Arsenide and Other Semiconductor Application Symposium (GAAS 2001), London, England

ER -