Numerical analysis of pulsed I- V curves and current compression in GaN FETs

K. Itagaki, H. Takayanagi, H. Nakano, K. Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Transient simulations of GaN MESFETs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

Original languageEnglish
Title of host publication2006 Asia-Pacific Microwave Conference Proceedings, APMC
Number of pages4
Publication statusPublished - 2006 Dec 1
Event2006 Asia-Pacific Microwave Conference, APMC - Yokohama, Japan
Duration: 2006 Dec 122006 Dec 15

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC


Conference2006 Asia-Pacific Microwave Conference, APMC


  • Current compression
  • Deep level
  • GaN FET
  • Pulsed I-V curves

ASJC Scopus subject areas

  • Engineering(all)


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