Numerical analysis of pulsed I- V curves and current compression in GaN FETs

K. Itagaki; H. Takayanagi; H. Nakano; K. Horio

doi:10.1109/APMC.2006.4429453

Numerical analysis of pulsed I- V curves and current compression in GaN FETs

K. Itagaki, H. Takayanagi, H. Nakano, K. Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Transient simulations of GaN MESFETs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

Original language	English
Title of host publication	2006 Asia-Pacific Microwave Conference Proceedings, APMC
Pages	421-424
Number of pages	4
DOIs	https://doi.org/10.1109/APMC.2006.4429453
Publication status	Published - 2006 Dec 1
Event	2006 Asia-Pacific Microwave Conference, APMC - Yokohama, Japan Duration: 2006 Dec 12 → 2006 Dec 15

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	1

Conference

Conference	2006 Asia-Pacific Microwave Conference, APMC
Country/Territory	Japan
City	Yokohama
Period	06/12/12 → 06/12/15

Keywords

Current compression
Deep level
GaN FET
Pulsed I-V curves

ASJC Scopus subject areas

Engineering(all)

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10.1109/APMC.2006.4429453

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Itagaki, K, Takayanagi, H, Nakano, H & Horio, K 2006, Numerical analysis of pulsed I- V curves and current compression in GaN FETs. in 2006 Asia-Pacific Microwave Conference Proceedings, APMC., 4429453, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 1, pp. 421-424, 2006 Asia-Pacific Microwave Conference, APMC, Yokohama, Japan, 06/12/12. https://doi.org/10.1109/APMC.2006.4429453

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title = "Numerical analysis of pulsed I- V curves and current compression in GaN FETs",

abstract = "Transient simulations of GaN MESFETs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.",

keywords = "Current compression, Deep level, GaN FET, Pulsed I-V curves",

author = "K. Itagaki and H. Takayanagi and H. Nakano and K. Horio",

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T1 - Numerical analysis of pulsed I- V curves and current compression in GaN FETs

AU - Itagaki, K.

AU - Takayanagi, H.

AU - Nakano, H.

AU - Horio, K.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Transient simulations of GaN MESFETs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

AB - Transient simulations of GaN MESFETs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current compression is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current compression in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

KW - Current compression

KW - Deep level

KW - GaN FET

KW - Pulsed I-V curves

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BT - 2006 Asia-Pacific Microwave Conference Proceedings, APMC

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Y2 - 12 December 2006 through 15 December 2006

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Numerical analysis of pulsed I- V curves and current compression in GaN FETs

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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