The effects of substrate trap 'EL2' on the turn-on characteristics of GaAs MESFETs are studied through two-dimensional simulation. It is found that abnormal current overshoot and subsequent slow transients can be observed due to EL2 when the off-state gate voltage is strongly negative and electrons are also depleted in the substrate.
|Number of pages||2|
|Publication status||Published - 1999 Feb 18|
ASJC Scopus subject areas
- Electrical and Electronic Engineering