Abstract
The effects of substrate trap 'EL2' on the turn-on characteristics of GaAs MESFETs are studied through two-dimensional simulation. It is found that abnormal current overshoot and subsequent slow transients can be observed due to EL2 when the off-state gate voltage is strongly negative and electrons are also depleted in the substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 343-344 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 35 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1999 Feb 18 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering