Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs

Kazushige Horio; Akira Wakabayashi

doi:10.1109/16.887007

Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs

Kazushige Horio, Akira Wakabayashi

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Effects of surface states on the "kink" (or an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by two-dimensional (2-D) simulations. It is shown that the kink could arise due to a space-charge effect originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states, which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon should be a rather slow process. Substrate-related kink dynamics are also analyzed.

Original language	English
Pages (from-to)	2270-2276
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	47
Issue number	12
DOIs	https://doi.org/10.1109/16.887007
Publication status	Published - 2000 Dec 1

Keywords

2-D simulation
GaAs
Impact ionization
Kink
MESFET
Surface state
Trap

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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N2 - Effects of surface states on the "kink" (or an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by two-dimensional (2-D) simulations. It is shown that the kink could arise due to a space-charge effect originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states, which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon should be a rather slow process. Substrate-related kink dynamics are also analyzed.

AB - Effects of surface states on the "kink" (or an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by two-dimensional (2-D) simulations. It is shown that the kink could arise due to a space-charge effect originated from impact ionization of holes and the following hole trapping by the surface states. The onset voltage for current rise depends on the nature of surface states, which strongly affects the potential profiles. Transient or dynamic simulation indicates that the trap-related kink phenomenon should be a rather slow process. Substrate-related kink dynamics are also analyzed.

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KW - Surface state

KW - Trap

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Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs

Abstract

Keywords

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